rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 1 of 8 SMN18T50FD advanced n-ch power mosfet switching regulator application features ? drain-source breakdown voltage: bv dss = 500v ? low gate charge: q g =65nc (typ.) ? low drain-source on resistance: r ds(on) =0.21 ? (typ.) ? 100% avalanche tested ? rohs compliant device ordering information part number marking package SMN18T50FD smn18t50 to-220f-3l marking information absolute maximum ratings (t c =25 ? c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v drain current (dc) * i d t c =25 ? c 18 a t c =100 ? c 11.4 a drain current (pulsed) * i dm 72 a single pulsed avalanche energy (note 2) e as 900 mj repetitive avalanche current (note 1) i ar 18 a repetitive avalanche energy (note 1) e ar 4.8 mj power dissipation p d 48 w peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns junction temperature t j 150 ? c storage temperature range t stg -55~150 ? c * drain current limited by maximum junction temperature auk ymdd sdb20d45 auk ymdd sdb20d45 auk fymdd smn18t50 column 1: manufacturer column 2: production information e.g.) fymdd -. f: factory management code -. ymdd: date code (year, month, date) column 3: device code to-220f-3l g d s
rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 2.6 ? c/w thermal resistance, junction to ambient r th(j-a) max. 62.5 electrical characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 500 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 2 - 4 v drain-source cut-off current i dss v ds =500v, v gs =0v - - 1 ua v ds =400v, t c =125 ? c - - 100 ua gate leakage current i gss v ds =0v, v gs = ? 30v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =9a - 0.21 0.26 ? forward transfer conductance (note 4) g fs v ds =10v, i d =9a - 24.6 - s input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 3120 - pf output capacitance c oss - 355 - reverse transfer capacitance c rss - 27 - turn-on delay time (note 4,5) t d(on) v dd =250v, i d =18a, r g =25 ? - 95 - ns rise time (note 4,5) t r - 375 - turn-off delay time (note 4,5) t d(off) - 100 - fall time (note 4,5) t f - 105 - total gate charge (note 4,5) q g v ds =400v, v gs =10v, i d =18a - 65 85 nc gate-source charge (note 4,5) q gs - 17.6 - gate-drain charge (note 4,5) q gd - 18.4 - source-drain diode ratings and characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 18 a source current (pulsed) i sm - - 72 a forward voltage v sd v gs =0v, i s =18a - - 1.4 v reverse recovery time (note 4,5) t rr i s =18a, v gs =0v di s /dt=100a/us - 507 - ns reverse recovery charge (note 4,5) q rr - 7.2 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=5mh, i as =18a, v dd =50v, r g =25 ? , starting t j =25 ? c 3. i s 18a, di/dt 200a/us, v dd bv dss , starting t j =25 ? c 4. pulse test: pulse width 300us, duty cycle 2% 5. essentially independent of operati ng temperature typical characteristics SMN18T50FD
rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 3 of 8 electrical characteristics curve - 0.0 source - drain voltage, v sd [v] reverse drain current, i dr [a] v gs = 0v 250 ? pulse test 150 25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 20 30 40 50 60 gate-source voltage v gs [v] total gate charge qg [nc] 0 15 30 45 60 75 0 5 10 v dd =400v note i d =18a tc=25 SMN18T50FD fig. 1 i d - v ds fig. 2 i d ? v gs fig. 3 r ds(on) - i d fig. 4 i dr - v sd fig. 5 capacitance - v ds fig. 6 v gs - q g
rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 4 of 8 electrical characteristics curve (continue) c 0.0 junction temperature, t j [c] r ds(on) ' (nomalized) -50-2502550 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 note 1.v gs =10a 2. i d =9a SMN18T50FD fig. 7 bv dss - t j fig. 8 r ds(on) - t j fig. 9 i d - t c fig. 10 safe operating area fig. 11 transient thermal impedance
rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 5 of 8 fig. 13 resistive switching test circuit & waveform fig. 14 e as test circuit & waveform fig. 12 gate charge test circuit & waveform SMN18T50FD
rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 6 of 8 fig. 15 diode reverse recovery time test circuit & waveform SMN18T50FD
rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 7 of 8 package outline dimensions SMN18T50FD
rev. date: 27-mar-1 3 ksd-t0o097-001 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication e quipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice. SMN18T50FD
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